平板式系列

俄罗斯型

陶瓷绝缘子密封金属外壳封装,双面冷却,适用于串联及并联,QRR和VTM偏差小...

  • 特点
  • 应用
  • 型号规格
特点

陶瓷绝缘子密封金属外壳封装,双面冷却;

放大门极,优化后通态损耗低;

适用于串联及并联,QRR和VTM偏差小;


典型应用

直流电机控制;

可控整流器、交流控制器;

交流电机用“软”启动器;

高电压SM驱动至30MW;

型号规格
TypeVDRM
(VRRM)
Irr
(IDRM)
IT(AV)
(Tc ℃)
ITSM
10ms
VTM/ITMVGTIGTdv/dtdi/dtTjmaxRth(j-c)WeightOutline

VmAAkAV/AVmAV/mksA/mks℃/W℃/Wkg
T123-200400-6500150.0200(95)4.001.90/6282.5≤200≥500301250.080.070A-7
T123-250400-6500150.0250(92)4.501.75/7852.5≤200≥500301250.080.070
T123-320400-6500150.0320(90)5.001.75/10052.5≤200≥500301250.0750.070
T133-400400-650030.0400(93)8.001.75/12562.5≤200≥5001001250.0450.018A-30
T133-500400-650050.0500(120)10.001.50/15702.5≤250≥5001001250.0350.100
T133-630400-650050.0630(120)12.001.45/19802.5≤250≥5001001250.0350.100
T143-400400-650050.0400(96)9.002.15/12562.5≤300≥10002501250.0340.240A-31
T143-500400-650030.0500(94)11.001.80/15702.5≤250≥10002501250.0340.240
T143-630400-650030.0630(93)13.001.65/19782.5≤250≥10002501250.030.240
T143-800400-650030.0800(85)14.001.75/25122.5≤250≥10002501250.030.240
T143-1000400-650070.01000(100)19.001.50/31402.5≤250≥10002501250.0280.160
T153-630400-650050.0630(93)15.002.10/19782.5≤250≥10002501250.0240.500A-34
T153-800400-650050.0800(90)20.001.90/25122.5≤250≥10002501250.0240.500
T153-1600400-6500100.01600(100)30.001.50/50242.5≤200≥10002501250.0160.330
T153-2000400-6500100.02000(95)36.001.45/62802.5≤200≥10002501250.0160.330
T253-500400-6500150.0530(80)10.002.40/15702.5≤250≥10002501250.0260.550A-34
T253-800400-650070.0800(91)17.002.10/25002.5≤250≥10002501250.0200.550
T253-1000400-650070.01000(88)22.001.80/31402.5≤250≥10002501250.0200.550
T253-1250400-650070.01250(92)28.0001.60/39252.5≤250≥10002501250.0180.550
T173-2000400-6500200.02000(90)49.001.65/62802.5≤250≥10002501250.0111.200A-25
T173-2500400-6500100.02700(85)52.001.70/78502.5≤250≥10002501250.0101.200
T173-3200400-6500200.03360(95)60.001.50/100502.5≤250≥10002501250.0101.200
T173-4000400-6500200.04000(85)62.001.50/125602.5≤250≥10002501250.0101.200

Note:

IGT、VGT、IH are test values under 25℃ . Unless otherwise specified,other parameters in the parameter table are test values under Tjm.

I²t=I²TSM×tw/2:tw=bottom width of half-sinusoid current. Under 50Hz,I²t=0.00512TSM(A²S)

When working under the current of 60 Hz:ITSM(8.3ms)=ITSM(10M=ms)×1.066,Tj=Tjm I²t(8.3ms)=I²t(10ms)×0.943,Tj=Tjm

Gate lead: white or colorless,cathode lead (if necessary): red


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