全扩散工艺 ，平板型陶瓷管封装，低开关损耗，双面冷却...
全扩散工艺 ，平板型陶瓷管封装；
分布式放大门极结构；
优良的动态特性；
低开关损耗，双面冷却；
快速开关性能；
逆变器、斩波器、感应加热；
各种类型的强迫换流器；
| Type | VDRM VRRM | IT(AV) THS 55℃ | Tq | dv/dt | di/dt | IDRM IRRM | IGT | VGT | IH | VTM/ITM | RTH (j-hs) | Tjm | M² | Outline |
| 25℃ | ||||||||||||||
| V | A | μS | V/μS | A/μS | mA | mA | V | mA | V/A | ℃/W | ℃ | KN | ||
| KK200A | 600-2500 | 200 | 16-35 | 500 | 100 | 30 | 40-250 | 0.9-2.5 | 20-400 | 2.9/600 | 0.065 | 115 | 5.3-10 | A-2,8,12,15 |
| KK300A | 600-2500 | 300 | 16-35 | 500 | 100 | 30 | 40-250 | 0.9-2.5 | 20-400 | 2.8/900 | 0.055 | 115 | 5.3-10 | A-3,9,16 |
| KK400A | 600-2500 | 400 | 16-35 | 500 | 100 | 40 | 40-250 | 0.9-2.5 | 20-400 | 2.8/1200 | 0.040 | 115 | 10-20 | A-4,10,13,17,18 |
| KK500A | 600-2500 | 500 | 16-35 | 500 | 150 | 50 | 40-250 | 0.9-2.5 | 20-400 | 3.15/1500 | 0.035 | 115 | 15-20 | A-4,10,13,17,18 |
| KK600A | 600-2500 | 600 | 16-35 | 500 | 150 | 50 | 40-300 | 0.9-3.0 | 20-400 | 3.15/1800 | 0.032 | 115 | 15-20 | A-5,19 |
| KK800A | 600-2500 | 800 | 16-35 | 1000 | 150 | 60 | 40-300 | 0.9-3.0 | 20-400 | 3.15/2400 | 0.030 | 115 | 18-25 | A-5,19 |
| KK1000A | 600-2500 | 1000 | 16-35 | 1000 | 150 | 80 | 40-300 | 0.9-3.0 | 20-500 | 3.15/3000 | 0.024 | 115 | 19-26 | A-6,11,14,20 |
| KK1200A | 600-2500 | 1200 | 16-35 | 1000 | 150 | 100 | 40-300 | 0.9-3.0 | 20-500 | 3.15/3000 | 0.022 | 115 | 21-30 | A-20,21 |
| KK1500A | 600-2500 | 1500 | 16-35 | 1000 | 250 | 120 | 40-300 | 0.9-3.5 | 20-500 | 3.15/3000 | 0.020 | 115 | 21-30 | A-20,21,22 |
| KK1800A | 600-2500 | 1800 | 16-35 | 1000 | 250 | 120 | 40-400 | 0.9-3.5 | 20-800 | 3.15/4000 | 0.017 | 115 | 27-34 | A-22,23,24,25 |
| KK2000A | 600-2500 | 2000 | 40-80 | 1000 | 250 | 160 | 40-400 | 0.9-4.5 | 20-1000 | 3.15/4000 | 0.016 | 115 | 30-40 | A-22,23,24,25 |
| KK2500A | 600-2500 | 2500 | 40-80 | 1000 | 250 | 200 | 40-450 | 0.9-4.5 | 20-1000 | 3.15/5000 | 0.011 | 115 | 35-47 | A-22,23,24,25 |
| KK3000A | 600-2500 | 3000 | 40-80 | 1000 | 250 | 250 | 40-450 | 0.9-4.5 | 20-1000 | 3.15/5000 | 0.009 | 115 | 70-85 | A-22,23,24,25 |
Note:
IGT、VGT、IH are test values under 25℃ . Unless otherwise specified,other parameters in the parameter table are test values under Tjm.
I²t=I²TSM×tw/2:tw=bottom width of half-sinusoid current. Under 50Hz，I²t=0.00512TSM(A²S)
When working under the current of 60 Hz:ITSM(8.3ms)=ITSM(10M=ms)×1.066，Tj=Tjm I²t(8.3ms)=I²t(10ms)×0.943,Tj=Tjm
Gate lead： white or colorless,cathode lead (if necessary): red
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